92706 / o2504tn(pc)/63096ha(ii)/ 4138ta(koto) no.2704-1/5 la6324n la6324nm overview the la6324 consists of four independent, high-performance, in ternally phase compensated operational amplifiers that are designed to operate from a single power supply over a wide range of voltages. these four operational amplifiers are packaged in a single package. as in case of conventional general-purpose operational amplifiers, operation from dual power supplies is also possible and the power dissipation is low. it can be applied to various uses in commercial and industrial equipment including all types of transducer amplifiers and dc amplifiers. features ? no phase compensation required ? wide operating voltage range: 3.0 v to 30.0 v (single supply) 1.5 v to 15.0 v (dual supplies) ? highly resistant to dielectric breakdown ? input voltag range includes the neighborhood of gnd level and output voltage range v out is from 0 to v cc ? 1.5 v. ? small current dissipation: i cc = 0.6 ma typ/v cc = + 5 v, r l = specitications absolute maximum ratings at ta = 25 c parameter symbol conditions ratings unit maximum supply voltage v cc max 32 v differential input voltage v id 32 v maximum input voltage v in max -0.3 to +32 v la6324n 720 mw allowable power dissipation pd max la6324nm 330 mw operating temperature topr -30 to +85 c storage temperature tstg -55 to +125 c ordering number : enn2704c monolithic linear ic high-performance quad operational amplifier any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before using any sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein.
la6324n,6324nm no.2704-2/5 operating characteristics at ta = 25 c, v cc = +5 v ratings parameter symbol conditions test circuit min typ max unit input offset voltage v io 1 2 7 mv input offset current i io i in (+) / i in (?) 2 5 50 na input bias current i b i in (+) / i in (?) 3 45 250 na common-mode input voltage range v icm 4 0 v cc ?1.5 v common-mode rejection ratio cmr 4 65 80 db voltage gain vg v cc = 15 v, r l 2 k ? 5 25 100 v/mv output voltage range v out 0 v cc ?1.5 v supply voltage rejection ratio svr 6 65 100 db channel separation cs f = 1 k to 20 khz 7 120 db i cc 8 0.6 2 ma current drain i cc v cc = 30 v 8 1.5 3 ma output current (source) i o source v in + = 1 v, v in ? = 0 v 9 20 40 ma output current (sink) i o sink v in + = 0 v, v in ? = 1 v 10 10 20 ma package dimensions unit : mm unit : mm 3003b [la6324n] 3034b [la6324nm] equivalent circuit pin assignment (1 unit) (la6324n, 6324nm) 1 7 14 8 (3.0) 3.65max 0.51min 19 . 0 ( 1.88) 2.54 1.2 0.48 0.25 7.62 6.4 3.4 1 14 7 8 (1.19) 1.27 0.35 0.15 10 . 0 1.7max (1.5) 0.1 4.4 6.4 0.63 sanyo: dip14(300mil) sanyo: mfp14(225mil) v out v in - v in + input v cc v out1 v out2 v in1 - v in2 - v in1 + v in2 + v cc v out4 v out3 top view v in4 - v in3 - v in4 + v in3 + gnd 14 13 12 11 10 9 8 6 5 4 3 2 2 3 1 1 4 - + + - 7
la6324n,6324nm no.2704-3/5 test circuit 1. input offset voltage v io 2. input offset current i io 3. input bias current i b 4. common-mode rejection ratio cmr 5. voltage gain vg common-mode input voltage range v icm 6. supply voltage rejection ratio svr 7. channel separation cs - + v cc null + - v cc v f4 r2 r r1 r1 r2 +1.4v v ee c - + v cc null + - v cc v f2 r2 r r r1 r1 r2 +1.4v v ee c - + v cc null + - v cc v f3 r2 r r1 r1 r2 +1.4v v ee c - + v cc null + - v cc v f7, v f8 r2 r1 r1 r2 r l v ee e k1, e k2 v ee c - + v cc v ee null + - v cc v f5, v f6 r2 r1 r1 e c1, e c2 r2 c v ee - + v cc1, v cc2 v ee null + - v cc v f9, v f10 r2 r1 r1 r2 cv ee - + v cc v ee1, v ee2 null + - v cc v f11, v f12 r2 r1 r1 r2 c a a b - + v cc v in v o v cc /2 v cc /2 r l r2 c a b r1 b - + v cc v cc /2 v cc /2 r l r2 b a r1 - + v cc v io = v f1 1+r2/r1 null + - v cc v f1 r2 r1 r1 r2 +1.4v v ee c cmr = 20 log (e c1 - e c2 ) (1+r2/r1) v f5 - v f6 svr (+) = 20 log (1+r2/r1) (v cc1 - v cc2 ) v f9 - v f10 svr (-) = 20 log (1+r2/r1) (v ee1 - v ee2 ) v f11 - v f12 sw: a cs (a b) = 20 log r2 v oa r1 v ob sw: b cs (b a) = 20 log these apply also to other channels. r2 v ob r1 v oa vg = (e k1 - e k2 ) (1+r2/r1) v f8 - v f7 i io = v f2 - v f1 r(1+r2/r1) i b = v f4 - v f3 2r(1+r2/r1)
la6324n,6324nm no.2704-4/5 8 . c urrent drain i cc 9. output current i o source 10. output current i o sink + - + - v cc v cc v o +1v a a v cc v o +1v a 3.0 2.0 1.0 0 4.0 040 10 20 30 i cc - v cc current drain, i cc - ma supply voltage, v cc - v 50 60 30 40 20 10 70 -20 0 20 40 60 80 i o (source) - ta o u tp u t c u rr e nt, i o (so u rc e ) - m a 120 80 40 0 160 010203040 vg - v cc voltage gain, vg - db supply voltage, v cc - v 80 60 40 20 0 100 010 40 20 30 i b - v cc input bias current, i b - na supply voltage, v cc - v 20 16 12 8 4 0 24 1k 23 5 23 5 23 5 10k 100k 1m v o - f o u tp u t v oltag e a m plit u d e , v out - v p-p frequency, f - hz 100 120 60 40 20 80 0 140 1 10 100 1k 10k 100k 1m 10 m vg - f voltage gain, vg - db frequency, f - hz
la6324n,6324nm no.2704-5/5 sample application circuits noninverting dc amplifier rectangular wa ve oscillator inverting ac amplifier 600 500 300 700 400 200 100 0 800 -30 120 030 720 25 60 85 90 pd max - t a a l l owa b l e power d i ss i pat i on, p d max - mw 320 280 240 200 160 120 80 40 0 360 -40 -30 -20 0 100 20 40 60 80 85 pd max - t a allowable power dissipation, pd max - mw la6324n la6324nm ps specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of october, 2004. specifications and information herein are subjec t to change without notice.
|
